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Products

Metal Target

copper-target

Copper (Cu) target

Purity: 99.97%~99.9999%
Manufacturing method: dissolution method

LCD displays
Touch panels
Semiconductor electrodes

chromium-target

Chromium (Cr) target

Purity: 99.5%~99.98%
Manufacturing method: HIP method, density ≧99%

Automotive mirrors, semiconductor wiring, displays, hard disks, electronic components, decorative coatings, sensitive materials

niobium-target

Niobium (Nb) target

Purity: 99.9%~99.999%
Manufacturing method: Vacuum smelting method

Thin film formation
Superconducting materials
Heat- and corrosion-resistant applications

zirconium-target

Zirconium (Zr) target

Purity: 99.5%~99.99%

Semiconductors: High-K insulating films, ferroelectric memory
Optical lenses, mirror coatings
Surface coatings, corrosion resistance, heat resistance, nuclear

titanium-target

Titanium (Ti) target

Purity: 99.5%~99.999%
Manufacturing method: dissolution method

Semiconductor electrodes
Integrated circuits
Liquid crystal displays

tantalum-target

Tantalum (Ta) target

Purity: 99.9%~99.999%
Manufacturing method: Vacuum smelting method

Capacitor manufacturing
Thin film formation (optics, aerospace)
High-temperature technology

iron-target

Iron (Fe) target

Purity: 99.9%~99.999%
Manufacturing method: Vacuum smelting method

Thin film formation
Superconducting materials
Heat- and corrosion-resistant applications

hafnium-target

Hafnium (Hf) target

Purity: 99.5%~99.9%

Semiconductors: High-K gate dielectrics for reduced leakage current
High-bandwidth memory, aerospace (supersonic aircraft)
Optical coatings, sensitive materials

nickel-target

Nickel (Ni) target

Purity: 99.9%~99.99%
Manufacturing method: dissolution method

Semiconductor electrodes, integrated circuits, liquid crystal displays, touch panels

tin-target

Tin (Sn) target

Purity: 99.9%~99.995%
Manufacturing method: Vacuum smelting method

Semiconductors, displays, solar panels, thin film formation for electronic devices and architectural glass

tungsten target

Tungsten (W) target

Purity: 99.9% - 99.999%
Manufacturing Method: Sintering + Rolling

Semiconductor electrodes
Integrated circuits
Heat dissipation layers in high-power electronic devices

Alloy Target

nickel-chromium-target

Nickel chromium (NiCr)
target

Purity>99.5%~99.9%
Manufacturing method: Vacuum smelting method

Thin film formation, microelectronics manufacturing
Low-E coating for architectural glass
LCD panels, recording media, semiconductors, and solar cells

aluminum-neodymium-target

Aluminum neodymium (Al-Nd)
Target

Purity > 99.95%
Manufacturing Method: Vacuum Melting
Size: 809.5 x 879.5 x 16mm (single piece available)

Flat panel displays (FPDs)
Magnetic recording media, magnetic sensors

tungsten-titanium-target

Tungsten Titanium (W-Ti)
Target

Purity>99.95%
Manufacturing method: powder metallurgy method

Microchips, thin film formation, solar cells
Diffusion inhibitors and adhesives for metal wiring

nickel-vanadium-target

Nickel vanadium (NiV)
target

Purity>99.5%~99.9%
Manufacturing method: Vacuum smelting method

Integrated circuit (IC) manufacturing
Semiconductor and microelectronics industry
High-quality thin film deposition

aluminum-silicon-target

Aluminum silicon (Al-Si) target

Purity >99.999%
Manufacturing method: Sintering

Flat Panel Displays (FPDs)
Magnetic Recording Media
Magnetic Sensors

c18200-backing-plate

C18200 (CuCr) Backing plate

Purity>99.97%
Manufacturing method: Vacuum smelting method

Used as a backing plate
Hardness ≥ 1/2H

nickel-copper-target

Nickel Copper (NiCu)
Target

Purity>99.9%
Manufacturing method: Vacuum smelting method

Semiconductor integrated circuits (VLSI)
Flat panel displays
Optical discs, surface coatings

aluminum-titanium-target

Aluminum titanium (Al-Ti) target

Purity>99.999%
Manufacturing method: smelting method

Cutting tool coatings, barrier film formation
Semiconductor device transistors and integrated circuits
Display and decorative coatings

c18150-backing-plate

C18150 (CuCr1Zr) Backing plate

Purity>98%
Manufacturing method: Vacuum smelting method

Used as a backing plate
Hardness ≥ 1/2H

Oxide Target

titanium-oxide-target

Titanium dioxide (TiO₂) target

Purity >99.9% Conductivity
Density ≥90%
Vacuum sintering, HP method

High-refractive-index lenses, optical filters, semiconductors
Recording media such as hard disk drives
Thin-film formation for flat panel displays
Photocatalysts (decomposition of atmospheric nitrogen oxides, antibacterial properties)

nickel-oxide-target

Nickel oxide (NiO) target

Purity > 99.99%
Density ≥ 85%
Sintering method, HP method

Resistive Random Access Memory (RRAM)
Transparent Conductive Oxide (TCO)
Gas Sensors
Spintronics

tin-oxide-target

Tin oxide (SnO) target

Purity > 99.99%
Density ≥ 85%
Sintering method, HP method

Important materials for screen construction
Transparent electrodes enabling touchscreen operation
Anti-static film, electromagnetic wave shielding film
Transparent heater, gas sensor

indium-antimonide-target

Indium antimonide (IAO) target

Purity > 99.99%
Density ≥ 85%
Sintering method
HP method

Anti-static coatings, widely used in paints, significantly reduce static buildup, and protect the safety of equipment and personnel.

vanadium-oxide-target

Vanadium oxide (V₂O₅) target

Purity > 99.9% *Toxic
Density ≥ 85%
Vacuum sintering, HP method

Thin film deposition for high-definition displays and optical devices
Optical coatings and sensor technology
Catalysts for organic acid production
Improved solar cell performance and efficiency

quartz-ring-target

Quartz (SiO₂) ring

Purity>99.995%
Density (2.6g/cm³)
Sintering method

Semiconductor manufacturing process
Optical equipment
Chemical laboratory equipment
Medical equipment

niobium-oxide-target-electrically-conductive

Niobium oxide (Nb₂O₅) target

Purity>99.9% *Electrically conductive
Density≧99%
HIP method

Miniaturization and high performance of optical products
Multilayer ceramic capacitors (MLCC)
LCD panels, hard disks
Thin-film formation in semiconductors, solar cells

ITO sputtering target

ITO (90% In₂O₃ 10% SnO₂) Target

Purity>99.99%
Density≧99.7%
powder metallurgy method
90:10wt%; 95:5wt%; 99:1wt%; 85:15wt%

It plays an important role in transparent electrodes for screens and solar cells, and is used as a transparent heating element material in building and automobile windows to prevent condensation and snow accumulation.

aluminum-oxide-target

Aluminum oxide (AI₂O₃) target

Purity>99.9%
Density≧90%
powder metallurgy method

Insulating films in chip manufacturing, high-performance electronic components
Sensors, solar panels, displays, etc.
Surface modification of optical devices, architectural glass
Conductive film formation, solar cell

indium oxide target

Indium oxide (In₂O₃) target

Purity > 99.99% *Firing traces are likely to remain
Density ≥ 90%
Sintering method, HP method

LCD, OLED, plasma displays, etc.
Voltage application electrodes in touch panels
Transparent electrodes in solar cells
Anti-fogging windshields and shop windows

niobium-oxide-target-electrically-insulating

Niobium oxide (Nb₂O₅) target

Purity>99.9% *Non-conductive
Density≧90%
HIP method

Miniaturization and high performance of optical products
Multilayer ceramic capacitors (MLCC)
LCD panels, hard disks
Thin-film formation in semiconductors, solar cells

Silicon Target

single-crystal-silicon-target

Single crystal silicon (Si) target

Purity>99.99999%
Manufacturing method: SZ method

Integrated circuits (ICs), large-scale integrated circuits (LSIs)
Thin film formation required for optical devices
Sensors, solar cells, transformers

single-crystal-silicon-planar-target

Single crystal silicon (Si) planar target

Purity>99.99999%
Density (2.33/cm³)
Manufacturing method: SZ method

Integrated circuits (ICs), large-scale integrated circuits (LSIs)
Thin film formation required for optical devices
Sensors, solar cells, transformers

polycrystalline-silicon-target

Polycrystalline silicon (Si) target

Purity >99.999%
Manufacturing method: Melting and sintering

CVD equipment, annealing furnaces, diffusion furnaces, and film deposition in LCD manufacturing equipment
Thin-film silicon solar cells, solar panels
Gears, sensors, and microelectrostatic motors

polycrystalline-silicon-ring-target

Polycrystalline silicon (Si) ring target

Purity >99.999%
Density (2.33/cm³)
Manufacturing Method: Melting and Sintering

CVD equipment, annealing furnaces, diffusion furnaces, liquid crystal manufacturing equipment
Thin-film silicon solar cells, solar panels
Microstructures such as gears, sensors, and microelectrostatic motors

Rotary Target

Chromium-Rotary-Target

Chromium (Cr)
Rotary Target

Molybdenum-Rotary-Target

Molybdenum (Mo)
Rotary Target

Niobium Oxide Rotary Target

Niobium oxide (Nb₂O₅)
Rotary target

Aluminum-Silicon-Rotary-Target

Aluminum Silicon (AlSi)
Rotary Target

Titanium Rotary Target

Titanium (Ti)
Rotary Target

Copper-Rotary-Target

Copper (Cu)
Rotary Target

Aluminum Rotary Target

Aluminum (Al)
Rotary Target

Silicon-Rotary-Target

Silicon (Si)
Rotary Target

Spattercore Co., Ltd.

〒532‐0011

6-3-32 Nishinakajima, Yodogawa-ku, Osaka City, Osaka Prefecture

Shin-Osaka Building 2, Room 707

TEL: 06-6732-9818

FAX: 06-6732-9819

Business hours: Weekdays 9:00-17:00

Sputtercore Co., Ltd.

6-3-32 Nishinakajima, Yodogawa-ku,
Osaka 532-0011, Japan,

No.2 Shin-Osaka Bldg. Room#707

TEL: +81-6-6732-9818

FAX: +81-6-6732-9819

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Copyright © Sputtercore Co. Ltd. All Rights Reserved.

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