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Single crystal silicon (Si) planar target

Purity>99.99999%
Density (2.33/cm³)
Manufacturing method: SZ method


It is used as a material in the manufacturing processes of integrated circuits (ICs) and large-scale integrated circuits (LSIs), as a target material for creating thin films necessary for optical devices using techniques such as sputtering, and as a component for a wide range of electronic devices such as sensors, solar cells, and transformers. It is also provided as a part for manufacturing equipment such as liquid crystal manufacturing equipment.

Integrated circuits (ICs), large-scale integrated circuits (LSIs)
Thin film formation required for optical devices
Sensors, solar cells, transformers

single-crystal-silicon-planar-target

Spattercore Co., Ltd.

〒532‐0011

6-3-32 Nishinakajima, Yodogawa-ku, Osaka City, Osaka Prefecture

Shin-Osaka Building 2, Room 707

TEL: 06-6732-9818

FAX: 06-6732-9819

Business hours: Weekdays 9:00-17:00

Sputtercore Co., Ltd.

6-3-32 Nishinakajima, Yodogawa-ku,
Osaka 532-0011, Japan,

No.2 Shin-Osaka Bldg. Room#707

TEL: +81-6-6732-9818

FAX: +81-6-6732-9819

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