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Hafnium (Hf) target

Purity: 99.5%~99.9%


Hf (hafnium) targets are required to have high purity, a high melting point, a high dielectric constant, and other properties.
Formation of high-k gate insulating films (e.g., HfO₂ films) in integrated circuits, transistors, and the like.
Indispensable for improving device performance and miniaturization.
Heat-resistant coatings.
Formation of thin-film coatings for optical components used in lenses, mirrors, lasers, communication equipment, etc. (We have usage records.)
Formation of thin films for high-precision sensors, environmental measurement instruments, and medical sensors.
Sputtering processes in the manufacture of thin-film transistors (TFTs) and touch panels.
Manufacture of high-performance catalysts and optimization of chemical reaction processes.

hafnium-target

Spattercore Co., Ltd.

〒532‐0011

6-3-32 Nishinakajima, Yodogawa-ku, Osaka City, Osaka Prefecture

Shin-Osaka Building 2, Room 707

TEL: 06-6732-9818

FAX: 06-6732-9819

Business hours: Weekdays 9:00-17:00

Sputtercore Co., Ltd.

6-3-32 Nishinakajima, Yodogawa-ku,
Osaka 532-0011, Japan,

No.2 Shin-Osaka Bldg. Room#707

TEL: +81-6-6732-9818

FAX: +81-6-6732-9819

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ISO9001

Copyright © Sputtercore Co. Ltd. All Rights Reserved.

Certified on June 25, 2026
ISO 9001 Quality Management System

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