PZT (Pb(Zr,Ti)) is an important ferroelectric and piezoelectric ceramic material, and the target is mainly used in plating technologies such as PVD and PLD, and widely applied in semiconductors, MEMS, optical devices, energy collectors, etc.

1. Characteristics

　1) Excellent ferroelectric and piezoelectric performance

・High-voltage electrical constant (d₃₃ can reach 500-800 pC/N)

・High dielectric constant (εᵣ>1000), suitable for high capacity devices.

・Low coercive field is strong and easy to polarize, suitable for non-volatile memory (FeRAM).

　2) Thermal and chemical stability

・High Curie temperature (~350°C), suitable for high temperature environments.

・High corrosion resistance and stable operation in oxidizing or acidic environments.

　3）Adjustable zirconium-titanium ratio (Zr/Ti)

　4）High induced density (≧95%)

　5）Brittle material

2. Main Applications

　1) Semiconductors and memory devices

・Ferroelectric memory (FeRAM): Non-volatile memory is realized by utilizing the residual polarization property of PZT.

・Dynamic Random Memory (DRAM): High dielectric constant can reduce the capacity size.

　・Satisfy the demand of high-end semiconductor at 3nm and below.

・Large wafer-level PZT thin film: for photonic integrated chips of 4 inches or larger.

　2) MEMS sensors and actuators

　3) Optical and photoelectric devices

・Electro-optic modulators: High Pockels coefficient of PZT thin film (>100 pm/V),
3 times higher than LiNbO 8323, suitable for high-speed optical communication.

・Infrared detectors, spatial light modulators

　4) Energy collectors

　5) Acoustic and ultrasonic devices 

・Ultrasonic transducers: microphones and speakers.