Alloy sputtering targets consisting of copper (Cu) and manganese (Mn) to produce functional thin films mainly by process

such as magnetron sputtering (PVD) and electron beam evaporation.

Their unique resistive properties, thermal stability, and diffusion-blocking performance have important functions in fields such as precision resistors, semiconductor packaging, and thermoelectric materials.

1. Characteristics

1) Controllable Resistive Properties

    ・The addition of manganese significantly improves the resistivity of copper (Cu 50 Mn 50 resistivity can reach ~150 μΩ-cm),          making it suitable for the production of precision resistor thin films.

    ・The temperature coefficient of resistance (TCR) can approach zero (e.g., Cu 60 Mn 40) by adjusting the composition, making it

        suitable for high-stability resistive elements.

2) Excellent diffusion barrier performance

   ・CuMn thin films effectively block interdiffusion between Cu and Si or dielectric layers and can replace conventional Ta/TaN

       barrier layers in advanced packages.

   ・In case of high temperature annealing, Mn preferentially oxidizes to form MnOx interface layer (self-forming into barrier 

      layer),  which improves thermal stability.

3) High purity and controllable microstructure

   ・High purity CuMn target (≥99.99%) can reduce the influence of impurities on the electrical properties of the thin film.

   ・Crystal grain size can be controlled to less than 50 μm using static pressure processes such as vacuum melting (VIM) or   

      mechanical alloying + heat.

4) Thermodynamic stability

    ・A dense MnOx interface layer is formed after annealing at 300-500°C, and its high temperature resistance is superior to that

       of  pure copper thin films.

(5) Environmental protection and cost advantage

    ・CuMn is more cost-effective than precious metal barrier layers such as Ru and Co, and is compliant with RoHS standards.

2. Main Applications

1) Advanced semiconductor packages

   ・Copper interconnect diffusion barrier layer

   Used in processes below 28 nm instead of conventional TaN to reduce interconnect resistance (possible to reduce 30% ). 

   ・TSV (Through-Silicon Via) technology

   As a barrier layer/seed layer integration material in 3D packages.

2) Precision electronic components

   ・Thin-film resistor networks

   For high-precision equipment and automotive electronics (e.g., Cu 50 Mn 50 alloy resistors).

   ・Strain sensors

   Improve measurement stability by utilizing low TCR characteristics.

3) Thermoelectric Materials and Devices

   ・Copper manganese based thermoelectric thin films

   Used in micro energy collection systems (Seebeck coefficient can reach ~100 μV/K).